Kioxia and SanDisk unveil the world’s highest-density 3D NAND flash memory, with the 332-layer QLC boasting an interface speed of 4800 MT/s.

Kioxia and Sandisk officially unveiled their latest BiCS10 3D QLC NAND flash chip at the Future of Memory and Storage Conference (FMS), claiming it is the highest-density 3D NAND product officially launched globally to date. The chip features a 332-layer stack structure, with a per-unit-area storage density of 37 Gb/mm², is equipped with a high-speed interface of up to 4800 MT/s, and supports the Standalone Command Addressing (SCA) function, targeting primarily the high-capacity data center-grade SSD market. Compared to the BiCS10 3D TLC NAND products previously released by the two companies (which had a storage density of over 29 Gb/mm²), the new QLC NAND further boosts data center storage capacity density. Industry insiders predict that with similar chip dimensions and number of memory cells, the chip could reach a capacity of approximately 1.33Tb, though the manufacturer has not yet disclosed specific capacity specifications. To meet data centers’ demands for high performance and low power consumption, Kioxia and Sandisk also introduced the Power Isolation Low Tap Terminal (PI-LTT) technology, which enhances high-speed signal integrity while reducing output driver power consumption. The two companies stated that based on the latest BiCS10 process technology, the new generation of QLC NAND not only achieves higher bit density, but also is expected to lower manufacturing costs after production ramps up, enabling higher-capacity SSDs to enter the market at more competitive prices.