South Korean media: Samsung is developing 8-layer HBM4E to meet NVIDIA's requirements.

According to a report by Seoul Economic Daily, Samsung Electronics is developing an 8-layer HBM4E product as required by NVIDIA, for use in NVIDIA’s custom high-bandwidth memory NVHBM. This design cuts the number of stacked layers compared to Samsung’s original plans for 12-layer and 16-layer products. NVIDIA has set a target speed of 17 to 18 Gbps, roughly 20% higher than the 14.4 Gbps of Samsung’s early HBM4E samples. The 8-layer design reduces the difficulty of wafer thinning, precision stacking, and backend packaging, eases yield pressure, and boosts supply capacity. NVHBM is expected to debut in NVIDIA’s Rubin Ultra AI GPU, scheduled for launch next year. Rubin Ultra will expand its GPU interconnect scale from the current 72 units to up to 576 units, using more high-speed GPUs working in tandem to offset the drop in storage capacity per individual GPU. Samsung has the capability to design and manufacture DRAM, logic chips, and base dies, allowing it to offer one-stop services for custom HBM. Industry insiders point out that Samsung has already demonstrated high transmission speeds on HBM4, and as NVIDIA shifts its competitive focus from high stacking to high-speed transmission, Samsung’s related capabilities may draw more attention.