Samsung and ASML collaborate to develop next-generation EUV lithography photomasks.
2 hours ago
According to Seoul Economic Daily, Samsung Electronics will collaborate with ASML, the world’s largest photolithography equipment manufacturer, to develop high numerical aperture (High-NA) extreme ultraviolet (EUV) lithography technology. Samsung is participating in an effort to drive an industry standard shift: moving from 6-inch photomasks, which have been in use since the 1980s, to 12-inch versions, and aims to be the first to establish a DRAM mass production system based on High-NA EUV equipment. Samsung plans to deploy High-NA EUV equipment in DRAM production starting in 2028, then expand the technology to 1.4-nanometer advanced logic processes to boost its foundry business. Expanding photomask size is designed to address limitations of EUV technology. High-NA EUV has a numerical aperture 66% higher than traditional EUV, enabling the creation of finer circuit patterns. Replacing current 6-inch photomasks with 12-inch ones will improve fab production efficiency and reduce chip manufacturing costs.
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